AOD6N50 Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – 500V,5.3A N-Channel MOSFET

AOD6N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
12
V_DS=400V
I_D=2.5A
1000
9
100
6
10
3
C_iss
C_oss
C_rss
0
0
3
6
9
12
15
18
Q_g (nC)
Figure 7: Gate-Charge Characteristics
100
10
R_DS(ON)
limited
1
DC
0.1
T_J(Max)=150°C
T_C=25°C
10µs
100µs
1ms
10ms
0.01
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
1
0.1
1
10
100
V_DS (Volts)
Figure 8: Capacitance Characteristics
1000
800
T_J(Max)=150°C
T_C=25°C
600
400
200
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=T_on/T
T_J,PK=T_C+P_DM.Z_θJC.R_θJC
1 ^{RθJC=1.2°C/W}
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
Single Pulse
P_D
T_on
T
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: April 2012
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