AOD476 Datasheet, PDF (4/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V_DS=12.5V
I_D=20A
6
4
2
0
0
3
6
9
12
15
Q_g (nC)
Figure 7: Gate-Charge Characteristics
100
10µs
100µs
10
DC
1ms
R_DS(ON)
limited
1
T_J(Max)=175°C, T_C=25°C
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1400
1200
C_iss
1000
800
600
1.4
400
C_oss
494
593
200
692
830
0
C_rss
0
5
10
15
20
V_DS (Volts)
Figure 8: Capacita₁nc₉e₃Characteristics
18
200
160
T_J(Max)=175°C
T_C=25°C
120
80
40
0
0.0001 0.001 0.01 ₅₉ 0.1
1
10
Pulse W₁₄id₂th (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=T_on/T
T_J,PK=T_C+P_DM.Z_θJC.R_θJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJC=4.5°C/W
1
0.1
P_D
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
T_on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.