AOD464 Datasheet, PDF (4/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD464
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=50V
8
I_D=20A
6
3
C_iss
2
4
2
0
0
10
20
30
40
Q_g (nC)
Figure 7: Gate-Charge Characteristics
1000
T_J(Max)=175°C, T_A=25°C
100
R_DS(ON)
limited
10
DC
1
10µs
100µs
1ms, DC
1
C_oss
C_rss
0
0
20
40
60
80
100
V_DS (Volts)
Figure 8: Capacitance Characteristics
300
T_J(Max)=175°C
T_A=25°C
200
100
0.1
0.1
1
10
100
1000
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=T_on/T
In descending order
T_J,PK=T_A+P_DM.Z_θJC.R_θJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJC=1.5°C/W
1
0.1
P_D
0.01
0.00001
Single Pulse
0.0001
0.001
T_on
T
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.