AOB7S60 Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – 600V 7A a MOS Power Transistor

AOT7S60/AOB7S60/AOTF7S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
15
1.0E+01
1.0E+00
1.0E-01
125°C
25°C
12
V_DS=480V
I_D=3.5A
9
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V_SD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
6
3
0
0
2
4
6
8
10
12
Q_g (nC)
Figure 8: Gate-Charge Characteristics
10000
5
1000
100
10
1
C_iss
4
3
C_oss
2
C_rss
1
E_oss
0
0
100 200 300 400 500 600
V_DS (Volts)
Figure 9: Capacitance Characteristics
0
0
100 200 300 400 500 600
V_DS (Volts)
Figure 10: Coss stroed Energy
100
100
10 R_DS(ON)
limited
1
DC
0.1
T_J(Max)=150°C
T_C=25°C
0.01
1
10
100
V_DS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)7S60 (Note F)
10µs
100µs
1ms
10ms
1000
10 R_DS(ON)
limited
1
DC
0.1
T_J(Max)=150°C
T_C=25°C
0.01
1
10
100
V_DS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF7S60L(Note F)
10µs
100µs
1ms
10ms
0.1s
1s
1000
Rev0: Aug 2011
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