AO6704 Datasheet, PDF (4/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO6704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V_DS=15V
I_D=3.6A
4
3
2
1
0
0
1
2
3
4
5
Q_g (nC)
Figure 7: Gate-Charge Characteristics
100.0
T_J(Max)=150°C
T_A=25°C
10.0
R_DS(ON)
limited
10µs
100µs
1ms
1.0
10ms
1s
0.1s
10s
DC
0.1
0.1
1
10
100
Figure 9: MaximumV^DF^S o(Vrwolatrsd) Biased Safe
Operating Area (Note E)
400
350
300
C_iss
250
200
150
C_oss
100
C_rss
50
0
0
20
15
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
270
T_J(Max)=150°C
T_A=25₁°_.C₇
3.6
10
5
0
13
0.001 0.01
0.1
1
10
Pulse Width (s)
100 1000
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
In descending order
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJA=90°C/W
1
P_D
0.1
Single Pulse
0.01
T_on
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.