AO4612 Datasheet, PDF (4/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
V_DS=30V
8
I_D= 4.5A
6
4
2
0
0
10
Q_g (nC)
Figure 7: Gate-Charge Characteristics
800
600
C_iss
400
200
C_oss
C_rss
0
0
10
20
30
40
50
60
V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
R_DS(ON)
limited
10.0
1.0
T_J(Max)=150°C
T_A=25°C
100µs 10µs
10ms 1ms
1s
10s 0.1s
DC
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
40
T_J(Max)=150°C
T_A=25°C
30
20
10
0
0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJA=62.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P_D
Single Pulse
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.