AO4464 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4464
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=15V
8
I_D=8.5A
6
1000
800
C_iss
600
4
2
0
0
2
4
6
8
10 12 14
Q_g (nC)
Figure 7: Gate-Charge Characteristics
400
C_oss
200
C_rss
0
0
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
R_DS(ON)
limited
100µs
1ms
10ms
0.1s
10µs
1.0
T_J(Max)=150°C
T_A=25°C
1s
10s
DC
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
50
T_J(Max)=150°C
40
T_A=25°C
30
20
10
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJA=40°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONEN0.T1S IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DPO_DES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.