AO4430 Datasheet, PDF (4/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO4430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=15V
8
I_D=18A
6
4
8000
6000
C_iss
4000
2
0
0
20
40
60
80
100 120
Q_g (nC)
Figure 7: Gate-Charge Characteristics
2000
0
0
C_rss
C_oss
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
R_DS(ON)
limited
100µs
10ms ^1ms
0.1s
1s
10s
DC
T_J(Max)=150°C
T_A=25°C
10µs
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
T_J(Max)=150°C
80
T_A=25°C
60
40
20
0
0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
In descending order
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJA=75°C/W
1
0.1
P_D
Single Pulse
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.
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