AO3407 Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=-15V
8
I_D=-4A
1000
800
C_iss
6
600
4
400
C_oss
C_rss
2
200
0
0
4
8
12
16
-Q_g (nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
-V_DS (Volts)
Figure 8: Capacitance Characteristics
100
T_J(Max)=150°C
T_A=25°C
R_DS(ON)
10 _limited
100µs _10µs
1ms
0.1s _10ms
1
1s
10s
DC
0.1
0.1
1
10
100
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
40
T_J(Max)=150°C
T_A=25°C
30
20
10
0
0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJA=90°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P_D
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T_on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.