AO6405 Datasheet, PDF (3/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO6405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
-10V _-6V ^-5V
-4.5V
8
15
-4V
6
10
-3.5V
4
5
V_GS=-3V
2
0
-2.5V
0
0.00
1.00
2.00
3.00
4.00
5.00
0
-V_DS (Volts)
Figure 1: On-Region Characteristics
V_DS=-5V
125°C
25°C
1
2
3
4
-V_GS(Volts)
Figure 2: Transfer Characteristics
100
80
V_GS=-4.5V
60
V_GS=-10V
40
20
1
3
5
7
9
-I_D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.60E+00
1.40E+00
1.20E+00
V_GS=-4.5V
V_GS=-10V
1.00E+00
I_D=-5A
8.00E-01
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
160
140
I_D=-5A
120
100
80
125°C
60
40
25°C
FUNCTIO₂₀NS AND RELIABILITY WITHOUT NOTICE.
2
4
6
8
10
-V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E+01
1E+00
1E-01
125°C
1E-02
1E-03
1E-04
25°C
1E-05
1E-06
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V_SD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.