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AOU403 Datasheet, PDF (2/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor
AOU403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
V
IDSS
Zero Gate Voltage Drain Current
VDS=-48V, VGS=0V
TJ=55°C
-0.003 -1
µA
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5 -2.1 -3
V
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-12A
TJ=125°C
91 115
mΩ
150
VGS=-4.5V, ID=-8A
114 150 mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-12A
12.8
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.76 -1
V
IS
Maximum Body-Diode Continuous Current
-12
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
987 1185 pF
114
pF
46
pF
7
10
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
VGS=-10V, VDS=-30V, ID=-12A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=-10V, VDS=-30V, RL=2.5Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
15.8 20 nC
7.4
9
nC
3
nC
3.5
nC
9
ns
10
ns
25
ns
11
ns
27.5 35
ns
30
nC
A: The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev 2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.