AOU402 Datasheet, PDF (2/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOU402
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=10mA, V_GS=0V
60
V
I_DSS
Zero Gate Voltage Drain Current
V_DS=48V, V_GS=0V
T_J=55°C
1
µA
5
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±20V
100 nA
V_GS(th) Gate Threshold Voltage
V_DS=V_GS, I_D=250µA
1
2.4
3
V
I_D(ON)
On state drain current
V_GS=10V, V_DS=5V
30
A
R_DS(ON) Static Drain-Source On-Resistance
V_GS=10V, I_D=12A
T_J=125°C
47
60
mΩ
85
V_GS=4.5V, I_D=6A
67
85 ^mΩ
g_FS
Forward Transconductance
V_DS=5V, I_D=12A
14
S
V_SD
Diode Forward Voltage
I_S=1A, V_GS=0V
0.74 1
V
I_S
Maximum Body-Diode Continuous Current
12
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=30V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
385 540 pF
55
pF
20
pF
1.35 2
Ω
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
Q_g(4.5V) Total Gate Charge
Q_gs
Gate Source Charge
V_GS=10V, V_DS=30V, I_D=12A
Q_gd
Gate Drain Charge
t_D(on)
Turn-On DelayTime
t_r
Turn-On Rise Time
V_GS=10V, V_DS=30V, R_L=2.5Ω,
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
t_f
Turn-Off Fall Time
t_rr
Body Diode Reverse Recovery Time ^IF^{=12A, dI/dt=100A/µs}
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=12A, dI/dt=100A/µs}
7.5 10 nC
3.8
5
nC
1.2
nC
1.9
nC
4.2
ns
3.4
ns
16
ns
2
ns
27.6 ₃₅
ns
30
nC
A: The value of R _θJA is measured with the device in a still air environment with T _A =25°C.
B. The power dissipation P_D is based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175°C.
D. The R _θJA is the sum of the thermal impedence from junction to case R _θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T_J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev1: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.