AOT410L Datasheet, PDF (2/7 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET SDMOS™

AOT410L/AOB410L
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current
I_GSS
V_GS(th)
I_D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
I_D=250µA, V_GS=0V
100
V
V_DS=100V, V_GS=0V
T_J=55°C
10
µA
50
V_DS=0V, V_GS= ±25V
100 nA
V_DS=5V _,I_D=250µA
2
3
4
V
V_GS=10V, V_DS=5V
405
A
V_GS=10V, I_D=20A
T0220
T_J=125°C
5.1 6.5
mΩ
8.8 11
R_DS(ON) Static Drain-Source On-Resistance
V_GS=7V, I_D=20A
T0220
V_GS=10V, I_D=20A
TO263
5.8 7.5 mΩ
mΩ
4.8 6.2
V_GS=7V, I_D=20A
TO263
g_FS
Forward Transconductance
V_SD
Diode Forward Voltage
V_DS=5V, I_D=20A
I_S=1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current
5.5 7.2 mΩ
70
S
0.63 1
V
150 A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=50V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
5290 6622 7950 pF
415 594 770 pF
130 215 300 pF
0.3 0.64 1
Ω
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
85 107 129 nC
Q_gs
Gate Source Charge
V_GS=10V, V_DS=50V, I_D=20A
23 28.5 34 nC
Q_gd
Gate Drain Charge
24
40
56
nC
t_D(on)
Turn-On DelayTime
28
ns
t_r
t_D(off)
Turn-On Rise Time
Turn-Off DelayTime
V_GS=10V, V_DS=50V, R_L=2.5Ω,
22
ns
R_GEN=3Ω
43.5
ns
t_f
Turn-Off Fall Time
14.5
ns
t_rr
Body Diode Reverse Recovery Time ^IF^{=20A, dI/dt=500A/µs}
19
27
35
ns
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=20A, dI/dt=500A/µs}
124 177 230 ^nC
A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
Power dissipation P_DSM is based on R _θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation P_D is based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial T_J =25°C.
D. The R_θJA is the sum of the thermal impedence from junction to case R_θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T_J(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: Jul 2011
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