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| AOP605 Datasheet, PDF (2/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor | |||
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AOP605
n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1
1.8
3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=7.5A
TJ=125°C
22.6 28
mâ¦
VGS=4.5V, ID=6.0A
33
43 mâ¦
gFS
Forward Transconductance
VDS=5V, ID=7.5A
12
16
S
VSD
Body Diode Forward Voltage
IS=1A, VGS=0V
0.76 1
V
IS
Maximum Body-DiodeContinuous Current
4
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance.
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
680 820 pF
102
pF
77
pF
3
3.6
â¦
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13.84 16.6 nC
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=4.5V, VDS=15V, ID=7.5A
6.74 8.1 nC
1.82
nC
Qgd
Gate Drain Charge
3.2
nC
tD(on)
Turn-On DelayTime
4.6
ns
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.0â¦,
4.1
ns
tD(off)
Turn-Off DelayTime
RGEN=6â¦
20.6
ns
tf
Turn-Off Fall Time
5.2
ns
trr
Body Diode Reverse Recovery time IF=7.5A, dI/dt=100A/µs
16.5 20
ns
Qrr
Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs
7.8
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ⤠10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
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