AON6512 Datasheet, PDF (2/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS

AON6512
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V
30
V
I_DSS
Zero Gate Voltage Drain Current
V_DS=30V, V_GS=0V
T_J=55°C
1
µA
5
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS= ±20V
100 nA
V_GS(th) Gate Threshold Voltage
V_DS=V_GS, I_D=250µA
1
1.5
2
V
R_DS(ON) Static Drain-Source On-Resistance
V_GS=10V, I_D=20A
T_J=125°C
1.4 1.7
mΩ
1.9 2.3
V_GS=4.5V, I_D=20A
1.9 2.4 mΩ
g_FS
Forward Transconductance
V_DS=5V, I_D=20A
85
S
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
0.7
1
V
I_S
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
3430
pF
1327
pF
175
pF
0.3 0.7 1.1
Ω
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
53
64 nC
Q_g(4.5V) Total Gate Charge
Q_gs
Gate Source Charge
V_GS=10V, V_DS=15V, I_D=20A
25
30 nC
7.8
nC
Q_gd
Gate Drain Charge
10.3
nC
t_D(on)
Turn-On DelayTime
7.5
ns
t_r
t_D(off)
Turn-On Rise Time
Turn-Off DelayTime
V_GS=10V, V_DS=15V, R_L=0.75Ω,
5.0
ns
R_GEN=3Ω
33.8
ns
t_f
Turn-Off Fall Time
9.8
ns
t_rr
Body Diode Reverse Recovery Time ^IF^{=20A, dI/dt=500A/µs}
22
ns
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=20A, dI/dt=500A/µs}
58
nC
A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
Power dissipation P_DSM is based on R _θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P_D is based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T_J(MAX)=150°C.
D. The R_θJA is the sum of the thermal impedance from junction to case R_θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Nov 2011
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