AOL1700 Datasheet, PDF (2/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1700
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=1mA, V_GS=0V
30
I_DSS
Zero Gate Voltage Drain Current
V_DS=30V, V_GS=0V
T_J=125°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS= ±20V
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=250µA
1.2
I_D(ON)
On state drain current
V_GS=10V, V_DS=5V
200
V_GS=10V, I_D=20A
R_DS(ON) Static Drain-Source On-Resistance
T_J=125°C
V_GS=4.5V, I_D=20A
g_FS
Forward Transconductance
V_DS=5V, I_D=20A
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
I_S
Maximum Body-Diode + Schottky Diode Continuous Current ^H
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
Q_g(4.5V) Total Gate Charge
Q_gs
Gate Source Charge
V_GS=10V, V_DS=15V, I_D=20A
Q_gd
Gate Drain Charge
t_D(on)
Turn-On DelayTime
t_r
Turn-On Rise Time
V_GS=10V, V_DS=15V, R_L=0.75Ω,
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
t_f
Turn-Off Fall Time
t_rr
Body Diode Reverse Recovery Time ^IF^{=20A, dI/dt=300A/µs}
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=20A, dI/dt=300A/µs}
Typ Max Units
V
0.1
mA
20
0.1 µA
1.5 2.2
V
A
3.4 4.2
mΩ
5.2 6.5
4.8 6.0 mΩ
90
S
0.36 0.5
V
85
A
3760 4512 pF
682
pF
314
pF
0.75 1.5
Ω
62 74 nC
29 35 nC
12
nC
12
nC
9.5
ns
8.5
ns
34
ns
9
ns
18
27
ns
22
nC
A: The value of R_θJA is measured with the device in a still air environment with T _A =25°C. The power dissipation P _DSM and current rating I_DSM
are based on T_J(MAX)=150°C, using steady-state junction-to-ambient thermal resistance.
B. The power dissipation P _D is based on T_J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T _J(MAX)=175°C.
D. The R_θJA is the sum of the thermal impedence from junction to case R _θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T _J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ^ST 2008)
Rev3: Dec 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com