AOD7S60 Datasheet, PDF (2/7 Pages) Alpha & Omega Semiconductors – 600V 7A a MOS Power Transistor

AOD7S60/AOU7S60
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V, T_J=25°C
I_D=250µA, V_GS=0V, T_J=150°C
I_DSS
Zero Gate Voltage Drain Current
V_DS=600V, V_GS=0V
V_DS=480V, T_J=150°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±30V
V_GS(th) Gate Threshold Voltage
V_DS=5V,I_D=250µA
R_DS(ON) Static Drain-Source On-Resistance
V_GS=10V, I_D=3.5A, T_J=25°C
V_GS=10V, I_D=3.5A, T_J=150°C
V_SD
Diode Forward Voltage
I_S=3.5A,V_GS=0V, T_J=25°C
I_S
Maximum Body-Diode Continuous Current
I_SM
Maximum Body-Diode Pulsed Current^C
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
V_GS=0V, V_DS=100V, f=1MHz
C_o(er)
C_o(tr)
Effective output capacitance, energy
related ^I
Effective output capacitance, time
related ^J
VGS=0V, V_DS=0 to 480V, f=1MHz
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
VGS=0V, V_DS=100V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
I_rm
Q_rr
Total Gate Charge
Gate Source Charge
V_GS=10V, V_DS=480V, I_D=3.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=10V, V_DS=400V, I_D=3.5A,
R_G=25Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=3.5A,dI/dt=100A/µs,V}DS^=400V
Peak Reverse Recovery Current
I_F=3.5A,dI/dt=100A/µs,V_DS=400V
Body Diode Reverse Recovery Charge ^IF^{=3.5A,dI/dt=100A/µs,V}DS^=400V
Min Typ Max Units
600
-
-
650 700
-
V
-
-
1
µA
-
10
-
-
- ±100 nΑ
2.7 3.3 3.9
V
-
0.54 0.6
Ω
-
1.48 1.64 Ω
-
0.82
-
V
-
-
7
A
-
-
33
A
-
372
-
pF
-
28
-
pF
-
22
-
pF
-
65
-
pF
-
1.2
-
pF
-
17.5
-
Ω
-
8.2
-
nC
-
2.0
-
nC
-
2.8
-
nC
-
19
-
ns
-
13
-
ns
-
50
-
ns
-
15
-
ns
-
198
-
ns
-
18
-
A
-
2.4
-
µC
A. The value of R _θJA is measured with the device in a still air environment with T _A =25°C.
B. The power dissipation P_D is based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T_J
=25°C.
D. The R _θJA is the sum of the thermal impedance from junction to case R _θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.
H. L=60mH, I_AS=1.7A, V_DD=150V, Starting T_J=25°C
I. C_o(er) is a fixed capacitance that gives the same stored energy as C_oss while V_DS is rising from 0 to 80% V_(BR)DSS.
J. C_o(tr) is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_(BR)DSS.
K. Wave soldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Aug 2011
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