AO4800 Datasheet, PDF (2/5 Pages) Alpha Industries – Dual N-Channel Enhancement Mode Field Effect Transistor

This AOS product reliability report summarizes the qualification result for AO4800. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AO4800 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
Product Description
II.
Package and Die information
III.
Environmental Stress Test Summary and Result
IV. Reliability Evaluation
V.
Quality Assurance Information
I. Product Description:
The AO4800 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination
for use in buck converters. AO4800L (Green Product) is offered in a lead-free package.
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±12
Continuous Drain
T_A=25°C
6.9
Current ^G
T_A=70°C ID
5.8
Pulsed Drain Current ^C
I_DM
40
Power Dissipation ^B
Junction and Storage
Temperature Range
T_A=25°C
T_A=70°C
P_D
T_J, T_STG
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-
Ambient
Maximum Junction-to-
Ambient
Maximum Junction-to-Lead
T = 10s
Steady -
State
Steady -
State
Symbol
R_{θJ A}
R_{θJ L}
Typ
Max
Units
48
62.5
°C/W
74
110
°C/W
35
40
°C/W
2