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AO4706 Datasheet, PDF (2/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor
AO4706
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=1mA, VGS=0V
30
V
IDSS
IGSS
VGS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=30V, VGS=0V
TJ=125°C
0.02 0.1
mA
10
20
VDS=0V, VGS= ±12V
0.1 µA
VDS=VGS ID=250µA
1.5 1.85 2.4
V
ID(ON)
On state drain current
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, VDS=5V
100
A
VGS=10V, ID=16.5A
TJ=125°C
5.6 6.8
mΩ
8.4 10.5
VGS=4.5V, ID=15A
6.8 8.2 mΩ
gFS
Forward Transconductance
VSD
Diode Forward Voltage
VDS=5V, ID=16.5A
IS=1A,VGS=0V
112
S
0.37 0.5
V
IS
Maximum Body-Diode + Schottky Continuous Current
5
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
4000 5000 pF
520
pF
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
217
pF
0.6 0.9
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
59
77
nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=17A
27
35
nC
12
nC
Qgd
Gate Drain Charge
11
nC
tD(on)
Turn-On DelayTime
9
ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.9Ω,
9
ns
RGEN=3Ω
37
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=16.5A, dI/dt=300A/µs
8
ns
17
20
ns
Qrr
Body Diode Reverse Recovery Charge IF=16.5A, dI/dt=300A/µs
21
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev1: June 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com