AP30G120SW Datasheet, PDF (1/3 Pages) Alpha & Omega Semiconductors – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD

Advanced Power
Electronics Corp.
AP30G120SW
Pb Free Plating Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High speed switching
▼ Low Saturation Voltage
V_CE(sat)=3.0V@I_C=30A
▼ CO-PAK, IGBT with FRD
▼ RoHS Compliant
G
C
E
Absolute Maximum Ratings
Symbol
V_CES
V_GE
I_C@T_C=25℃
I_C@T_C=100℃
I_CM
I_F@T_C=100℃
I_FM
P_D@T_C=25℃
T_STG
T_J
T_L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current¹
Diode Continunous Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
TO-3P
V_CES
I_C
G
Rating
1200
±30
60
30
160
12
75
208
-55 to 150
-55 to 150
300
1200V
30A
C
E
Units
V
V
A
A
A
A
A
W
℃
℃
℃
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c(IGBT) Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value
0.6
1.6
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics@T_j=25^oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
BV_CES
I_GES
I_CES
V_CE(sat)
Collect-to-Emitter Breakdown Voltage
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
V_GE=0V, I_C=250uA
V_GE=±30V, V_CE=0V
V_CE=1200V, V_GE=0V
V_GE=15V, I_C=30A
V_GE=15V, I_C=60A
1200 -
-
-
-
-
-
3
- 3.8
V_GE(th)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
V_CE=V_GE, I_C=1mA
I_C=30A
V_CC=500V
V_GE=15V
V_CC=600V,
I_c=30A,
V_GE=15V,
R_G=5Ω,
Inductive Load
3 4.4
-
55
-
12
-
27
-
20
-
20
-
65
- 200
- 1.8
E_off
Turn-Off Switching Loss
C_ies
Input Capacitance
C_oes
Output Capacitance
V_GE=0V
V_CE=30V
- 1.1
- 1320
- 105
C_res
Reverse Transfer Capacitance
f=1.0MHz
-
9
Electrical Characteristics of Diode@T_j=25℃(unless otherwise specified)
V_F-1
Forward Voltage
V_F-2
Forward Voltage
t_rr
Reverse Recovery Time
I_F=10A
I_F=20A
I_F=10A
- 1.7
- 1.8
-
80
Q_rr
Reverse Recovery Charge
di/dt = 100 A/µs
-
22
Max.
-
±500
1
3.6
-
7
88
-
-
-
-
-
300
-
-
2110
-
-
2
2.4
-
-
Units
V
nA
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
V
V
ns
nC
Data and specifications subject to change without notice
200630061-1/3