AOWF8N50 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 500V, 8A N-Channel MOSFET

AOWF8N50
500V, 8A N-Channel MOSFET
General Description
Product Summary
The AOWF8N50 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply
designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
600V@150℃
8A
< 0.85Ω
TO-262F
Top View
Bottom View
D
S
D
G
AOWF8N50
G
D
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
G
S
AOWF8N50
500
±30
8*
6*
30
3.2
154
307
5
27.8
0.22
-55 to 150
300
AOWF8N50
65
4.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
Rev0: Dec 2011
www.aosmd.com
Page 1 of 5