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AOWF240 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 40V N-Channel MOSFET
AOWF240
40V N-Channel MOSFET
General Description
Product Summary
The AOWF240 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
Top View
TO-262F
Bottom View
40V
83A
< 2.6mΩ
< 3.5mΩ
D
S
GD
G
SD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
40
±20
83
59
400
21
16
68
231
33.3
16.7
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
11
47
Maximum Junction-to-Case
Steady-State
RθJC
3.7
Max
15
60
4.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Dec. 2011
www.aosmd.com
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