AOW4S60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V 4A a MOS TM Power Transistor

AOW4S60/AOWF4S60
600V 4A α MOS ^TM Power Transistor
General Description
Product Summary
The AOW4S60 & AOWF4S60 have been fabricated
using the advanced αMOS^TM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low R_DS(on), Q_g and E_OSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested
100% R_g Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
700V
16A
0.9Ω
6nC
1.5µJ
D
G ^DS
AOW4S60
G
SD
G
S
GD
G
SD
AOWF4S60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
dv/dt
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
AOW4S60
600
AOWF4S60
±30
4
4*
3.7
3.7*
16
1.6
38
77
83
25
0.67
0.2
100
20
-55 to 150
300
AOW4S60
65
0.5
1.5
AOWF4S60
65
--
5
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 1: Jan 2012
www.aosmd.com
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