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AOW482 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 80V N-Channel MOSFET
AOW482
80V N-Channel MOSFET
SDMOS TM
General Description
The AOW482 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
80V
105A
< 7.2mΩ
< 9mΩ
TO-262
Top View
Bottom View
D
G DS
G
SD
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
80
±25
105
82
330
11
9
82
336
333
167
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
11
47
0.36
Max
15
60
0.45
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: June 2010
www.aosmd.com
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