AOW29S50 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 500V 29A a MOS TM Power Transistor

AOW29S50
500V 29A α MOS ^TM Power Transistor
General Description
Product Summary
The AOW29S50 has been fabricated using the advanced
αMOS^TM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low R_DS(on), Q_g and E_OSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested
100% R_g Tested
Top View
TO-262
Bottom View
600V
120A
0.15Ω
26.6nC
6.3µJ
D
G ^DS
G
SD
AOW29S50
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
dv/dt
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
R_θJA
R_θCS
Maximum Junction-to-Case
R_θJC
G
AOW29S50
500
±30
29
18
120
6
70
608
357
2.9
100
20
-55 to 150
300
AOW29S50
65
0.5
0.35
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: April 2012
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