AOW298 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AOW298
100V N-Channel MOSFET
General Description
Product Summary
The AOW298 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of R_DS(ON)
and C_rss. In addition, switching behavior is well controlled
with a soft recovery body diode.This device is ideal for
boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
TO-262
D
Top View
Bottom View
100V
58A
< 14.5mΩ
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
G
S
Maximum
100
±20
58
41
130
9
7
20
20
100
50
2.1
1.33
-55 to 175
Typ
Max
12
15
50
60
1.2
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Oct. 2011
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