AOW20S60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V 20A a MOS TM Power Transistor

AOW20S60/AOWF20S60
600V 20A α MOS ^TM Power Transistor
General Description
Product Summary
The AOW20S60 & AOWF20S60 have been fabricated
using the advanced αMOS^TM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low R_DS(on), Q_g and E_OSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested
100% R_g Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
700V
80A
0.199Ω
20nC
4.9µJ
D
G ^DS
AOW20S60
G
SD
G
S
GD
G
SD
AOWF20S60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOW20S60
AOWF20S60
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
T_C=25°C
Power Dissipation ^B Derate above 25^oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
P_D
dv/dt
600
±30
20
14
80
3.4
23
188
266
2.1
100
20
20*
14*
28.0
0.22
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
300
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Case-to-sink ^A
R_θCS
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
AOW20S60
65
0.5
0.47
AOWF20S60
65
--
4.5
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 4: Jan 2012
www.aosmd.com
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