AOW15S60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V 15A a MOS POWER Transistor

AOW15S60/AOWF15S60
600V 15A α MOS ^TM Power Transistor
General Description
Product Summary
The AOW15S60 & AOWF15S60 have been fabricated
using the advanced αMOS^TM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low R_DS(on), Q_g and E_OSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested
100% R_g Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
700V
63A
0.29Ω
16nC
3.6µJ
D
G ^DS
AOW15S60
G
SD
G
S
GD
G
SD
AOWF15S60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOW15S60
AOWF15S60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
15
15*
10
10*
63
2.4
86
173
T_C=25°C
Power Dissipation ^B Derate above 25^oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
P_D
dv/dt
208
1.67
100
20
27.8
0.22
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOW15S60
65
0.5
AOWF15S60
65
--
Maximum Junction-to-Case
R_θJC
0.6
4.5
* Drain current limited by maximum junction temperature.
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: Aug 2011
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