AOW12N65 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 650V, 12A N-Channel MOSFET

AOW12N65/AOWF12N65
650V, 12A N-Channel MOSFET
General Description
Product Summary
The AOW12N65 & AOWF12N65 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low R_DS(on), C_iss and C_rss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
750V@150℃
12A
< 0.72Ω
D
G ^DS
AOW12N65
G
SD
G
G
S
D
SD
G
AOWF12N65
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOW12N65
AOWF12N65
Drain-Source Voltage
V_DS
650
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
12
12*
7.7
7.7*
48
5
375
750
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
278
28
2.2
0.22
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOW12N65
65
0.5
AOWF12N65
65
--
Maximum Junction-to-Case
R_θJC
0.45
4.5
* Drain current limited by maximum junction temperature.
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1:Jul 2011
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