AOW12N50 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 500V, 12A N-Channel MOSFET

AOW12N50/AOWF12N50
500V, 12A N-Channel MOSFET
General Description
Product Summary
The AOW12N50 & AOWF12N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low R_DS(on), C_iss and C_rss along with guaranteed avalanche
capability these parts can be adopted quickly into new
and existing offline power supply designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
600V@150℃
12A
< 0.52Ω
D
G ^DS
G
SD
G
S
D
G
G
SD
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOW12N50
AOWF12N50
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
V_GS
±30
Continuous Drain ^TC^=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
12
12*
8.4
8.4*
48
5.5
454
908
5
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
250
28
2
0.22
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Maximum Junction-to-Case
Symbol
R_θJA
R_θCS
R_θJC
AOW12N50
65
0.5
0.5
AOWF12N50
65
--
4.5
* Drain current limited by maximum junction temperature.
Rev0: June 2010
www.aosmd.com
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
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