AOW11N60 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 600V,11A N-Channel MOSFET

AOW11N60
600V,11A N-Channel MOSFET
General Description
Product Summary
The AOW11N60 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low R_DS(on), C_iss and C_rss
along with guaranteed avalanche capability this device
can be adopted quickly into new and existing offline power
supply designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
700V@150℃
11A
< 0.7Ω
TO-262
Top View
Bottom View
D
G ^DS
G
SD
G
AOW11N60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Maximum Junction-to-Case
Symbol
R_θJA
R_θCS
R_θJC
AOW11N60
600
±30
11
8.0
39
4.8
345
690
5
272
2.2
-55 to 150
300
AOW11N60
65
0.5
0.46
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: Jan 2012
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