AOW10N65 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 650V,10A N-Channel MOSFET

AOW10N65/AOWF10N65
650V,10A N-Channel MOSFET
General Description
Product Summary
The AOW10N65/AOWF10N65 is fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low R_DS(on), C_iss
and C_rss along with guaranteed avalanche capability this
device can be adopted quickly into new and existing offline
power supply designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
TO-262
Top View
Bottom View
TO-262F
Top View
Bottom View
750V@150℃
10A
< 1Ω
D
S
GD
G
SD
G
G
DS
D
S
G
AOW10N65
AOWF10N65
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOW10N65
AOWF10N65
Drain-Source Voltage
V_DS
650
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
10
10*
6.2
6.2*
36
3.4
173
347
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
250
28
2
0.22
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
R_θJA
R_θCS
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
AOW10N65
65
0.5
0.5
AOWF10N65
65
--
4.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Nov 2011
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