AOU438 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOU438
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU438 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOU438 is Pb-free (meets ROHS
& Sony 259 specifications). AOU438L is a Green
Product ordering option. AOU438 and AOU438L are
electrically identical .
V_DS (V) = 30V
I_D = 85A (V_GS = 10V)
R_DS(ON) < 4.5mΩ (V_GS = 10V)
R_DS(ON) < 6.5mΩ (V_GS = 4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G DS
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B,G
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
85
63
200
30
112
100
50
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Steady-State
R_θJA
100
Maximum Junction-to-Case ^C
Steady-State
R_θJC
0.8
1.5
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.