AOU436 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOU436
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU436 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOU436 is Pb-free
(meets ROHS & Sony 259 specifications). AOU436L
is a Green Product ordering option. AOU436 and
AOU436L are electrically identical.
V_DS (V) = 30V
I_D = 57A (V_GS = 10V)
R_DS(ON) < 8.5mΩ (V_GS = 10V)
R_DS(ON) < 14mΩ (V_GS = 4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G DS
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^B,
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
57
40
100
30
143
50
25
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Steady-State
R_θJA
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
2
Max
125
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W