AOU417 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOU417
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU417 uses advanced trench technology to
provide excellent RDS(ON), and low gate charge.
This device is suitable for use as a load switch or in
PWM applications. Standard product AOU417 is Pb-
free (meets ROHS & Sony 259 specifications).
AOU417L is a Green Product ordering option.
AOU417 and AOU417L are electrically identical .
Features
V_DS (V) = -30V
I_D = -18A (V_GS = -10V)
R_DS(ON) < 22mΩ (V_GS = -10V)
R_DS(ON) < 40mΩ (V_GS = -4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G DS
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C ^G
Current ^B,G
T_A=100°C ^G
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-18
-18
-40
-18
16.2
50
25
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^C
Symbol
Typ
Steady-State
R_θJA
105
Steady-State
R_θJL
2.5
Max
125
3
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.