AOU413 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOU413
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU413 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOU413 is Pb-free (meets ROHS & Sony 259
specifications). AOU413L is a Green Product
ordering option. AOU413 and AOU413L are
electrically identical.
TO-251
Features
V_DS (V) = -40V
I_D = -12A (V_GS = -10V)
R_DS(ON) < 45mΩ (V_GS = -10V)
R_DS(ON) < 69mΩ (V_GS = -4.5V)
D
Top View
Drain Connected
to Tab
G
S
G DS
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C ^G
Current ^B,G
T_A=100°C ^G
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-40
±20
-12
-12
-30
-12
30
50
25
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^C
Symbol
Typ
Steady-State
R_θJA
40
Steady-State
R_θJL
2.5
Max
50
3
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.