AOU412 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOU412
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU412 uses advanced trench technology to
provide excellent R_DS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOU412 is Pb-free (meets ROHS
& Sony 259 specifications). AOU412L is a Green
Product ordering option. AOU412 and AOU412L are
electrically identical.
TO-251
Top View
Drain
Connected to
Tab
G DS
Features
V_DS (V) = 30V
I_D = 85A (V_GS = 10V)
R_DS(ON) < 7.5mΩ (V_GS = 10V)
R_DS(ON) < 11mΩ (V_GS = 4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B,G
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
85
65
200
30
120
100
50
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Steady-State
R_θJA
105
125
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
1
1.5
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.