AOU405 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOU405
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU405 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the TO-251 package, this device is well suited for
high current load applications. Standard Product
AOU405 is Pb-free (meets ROHS & Sony 259
specifications). AOU405L is a Green Product
ordering option. AOU405 and AOU405L are
electrically identical.
Features
V_DS (V) = -30V
I_D = -18A (V_GS = -10V)
R_DS(ON) < 34mΩ (V_GS = -10V)
R_DS(ON) < 60mΩ (V_GS = -4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G DS
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C ^G
Current ^B,G
T_A=100°C ^G
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-18
-18
-40
-18
40
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
16.7
40
25
50
Maximum Junction-to-Case ^C
Steady-State
R_θJC
1.8
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W