AOU400 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOU400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU400 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOU400 is Pb-free
(meets ROHS & Sony 259 specifications). AOU400L
is a Green Product ordering option. AOU400 and
AOU400L are electrically identical.
Features
V_DS (V) = 60V
I_D = 38A (V_GS = 10V)
R_DS(ON) < 20mΩ (V_GS = 10V)
R_DS(ON) < 25mΩ (V_GS = 4.5V)
TO-251
Top View
Drain Connected to
Tab
D
G
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
Maximum
60
±20
38
27
60
30
140
60
30
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Steady-State
R_θJA
51
Maximum Junction-to-Case ^B
Steady-State
R_θJC
1.4
Max
60
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W