AOTS40B65H1 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – High efficient turn-on di/dt controllability

AOKS40B65H1/AOTS40B65H1
650V, 40A Alpha IGBT ^TM
General Description
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• High efficient turn-on di/dt controllability
• Very high switching speed
• Low turn-off switching loss and softness
• Very good EMI behavior
• Short-circuit ruggedness
Applications
• Power factor correction
• UPS & Solar Inverters
• Very High Switching Frequency Applications
• Welding Machines
Product Summary
V_CE
I_C (T_C=100°C)
V_CE(sat) (T_J=25°C)
TO-247
TO-220
650V
40A
1.9V
C
AOKS40B65H1
E
C
G
E
C
G
AOTS40B65H1
G
E
Orderable Part Number Package Type
Form
Minimum Order Quantity
AOKS40B65H1
TO247
Tube
240
AOTS40B65H1
TO220
Tube
1000
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOKS40B65H1/AOTS40B65H1
Units
Collector-Emitter Voltage
V _CE
650
V
Gate-Emitter Voltage
V _GE
±30
V
Continuous Collector ^TC=25°C
Current
T_C=100°C
I_C
80
A
40
Pulsed Collector Current, Limited by T_Jmax
I _CM
120
A
Turn off SOA, V_CE ≤ 650V, Limited by T_Jmax
I _LM
120
A
Short circuit withstanding time ₁₎
V_GE = 15V, V_CC ≤ 300V, T_J ≤ 175°C
t _SC
5
µs
Power Dissipation
T_C=25°C
T_C=100°C
P_D
300
150
W
Junction and Storage Temperature Range
T _J , T _STG
-55 to 175
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
Thermal Characteristics
300
°C
Parameter
Symbol
AOKS40B65H1/AOTS40B65H1
Units
Maximum Junction-to-Ambient
R _{θ JA}
40
Maximum IGBT Junction-to-Case
R _{θ JC}
0.5
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
°C/W
°C/W
Rev.1.0: April 2015
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