AOTF470 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOTF470
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOTF470 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
-RoHs Compliant
Features
V_DS (V) = 75V
I_D= 50 A
(V_GS= 10V)
R_DS(ON) < 11.5mΩ (V_GS = 10V)
D
G DS
AOTF470
TO-220F
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B _TC=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Symbol
R_θJA
R_θJC
AOTF470
75
±25
50
36
200
45
300
54
27
-55 to 175
AOTF470
60
2.8
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com