AOTF4126 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge

AOTF4126
100V N-Channel MOSFET
SDMOS ^TM
General Description
Product Summary
The AOTF4126 is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 7V)
100% UIS Tested
100% R_g Tested
100V
27A
< 24mΩ
< 30mΩ
TO220F
Top View
Bottom View
D
G ^DS
S ^DG
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^B
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current ^A
Avalanche Current ^C
T_A=25°C
T_A=70°C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
100
±25
27
19
110
6
5
28
39
42
21
2.1
1.4
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
10
48.5
2.9
Max
12
58
3.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev1 : May 2012
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