AOTF409 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOTF409
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOTF409/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low gate
resistance. With the excellent thermal resistance of the
TO220FL package, this device is well suited for high
current load applications.AOTF409 and AOTF409L are
electrically identical.
V_DS (V) =-60V
I_D = -24A
R_DS(ON) < 40mΩ
R_DS(ON) < 54mΩ
(V_GS = -10V)
(V_GS = -10V)
(V_GS = -4.5V)
- RoHS Compliant
- AOTF409L Halogen Free
100% UIS Tested!
TO-220FL
D
G
DS
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-60
±20
-24
-17
-60
-5.4
-4.3
-37
68
43
21
2.16
1.38
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
t ≤ 10s
Steady-State
R_θJA
10
48.5
12
58
Maximum Junction-to-Case
Steady-State
R_θJC
2.9
3.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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