AOTF20N40 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 400V,20A N-Channel MOSFET

AOTF20N40
400V,20A N-Channel MOSFET
General Description
Product Summary
The AOTF20N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low R_DS(on), C_iss and C_rss along
with guaranteed avalanche capability this parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOTF20N40L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Top View
TO-220F
500@150℃
20A
< 0.25Ω
D
G
AOTF20N40
S
GD
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOTF20N40
AOTF20N40L
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
400
±30
20*
20*
13*
13*
54
6
540
1080
5
50
40
0.4
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
AOTF20N40
65
2.5
AOTF20N40L
65
3.1
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
Rev0: May 2012
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