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| AOTF18N65 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 650V,18A N-Channel MOSFET | |||
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AOTF18N65
650V,18A N-Channel MOSFET
General Description
Product Summary
The AOTF18N65 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOTF18N65L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-220F
750V@150â
18A
< 0.39â¦
D
AOTF18N65
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
G
AOTF18N65
650
±30
18*
12*
80
6.3
595
1190
5
50
0.4
-55 to 150
300
AOTF18N65
65
2.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
Rev0: Jul 2011
www.aosmd.com
Page 1 of 5
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