AOTF11N62 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 620V,11A N-Channel MOSFET

AOTF11N62
620V,11A N-Channel MOSFET
General Description
Product Summary
The AOTF11N62 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low R_DS(on), C_iss and C_rss
along with guaranteed avalanche capability this device
can be adopted quickly into new and existing offline power
supply designs.
For Halogen Free add "L" suffix to part number:
AOTF11N62L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Top View
TO-220F
720V@150℃
11A
< 0.65Ω
D
AOTF11N62
S
GD
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOTF11N62
AOTF11N62L
Drain-Source Voltage
V_DS
620
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
11*
11*
8*
8*
Pulsed Drain Current ^C
I_DM
39
Avalanche Current ^C
I_AR
4.8
Repetitive avalanche energy ^C
E_AR
345
Single plused avalanche energy ^G
E_AS
690
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
50
0.4
39
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
AOTF11N62
65
2.5
AOTF11N62L
65
3.2
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
Rev 1: July 2012
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