AOTF10N90 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 900V, 10A N-Channel MOSFET

AOTF10N90
900V, 10A N-Channel MOSFET
General Description
Product Summary
The AOTF10N90 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low R_DS(on), C_iss and C_rss
along with guaranteed avalanche capability this part can
be adopted quickly into new and existing offline power
supply designs.
For Halogen Free add "L" suffix to part number:
AOTF10N90L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Top View
TO-220F
1000V@150℃
10A
< 0.98Ω
D
AOTF10N90
S
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
G
AOTF10N90
900
±30
10*
7*
38
3.7
205
410
5
50
0.4
-55 to 150
300
AOTF10N90
65
2.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
Rev0: Oct 2012
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