AOTF10N50FD Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 500V, 10A N-Channel MOSFET with Fast Recovery Diode

AOTF10N50FD
500V, 10A N-Channel MOSFET with Fast Recovery Diode
General Description
Product Summary
The AOTF10N50FD has been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications. By providing low R_DS(on), C_iss
and C_rss along with guaranteed avalanche capability this
part can be adopted quickly into new and existing offline
power supply designs.
For Halogen Free add "L" suffix to part number:
AOTF10N50FDL
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
Top View
TO-220F
600V@150℃
10A
< 0.75Ω
D
AOTF10N50FD
S
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
G
AOTF10N50FD
500
±30
10*
6*
33
3.8
216
433
5
208
1.7
-55 to 150
300
AOT10N50FD
65
2.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
Rev 0: Nov 2012
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