AOT9N50 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 500V, 9A N-Channel MOSFET

AOT9N50/AOTF9N50
500V, 9A N-Channel MOSFET
General Description
Product Summary
The AOT9N50 & AOTF9N50 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT9N50L & AOTF9N50L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
TO-220
Top View
TO-220F
600V@150℃
9A
< 0.85Ω
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT9N50
AOTF9N50
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
9
9*
6.0
6*
30
3.2
154
307
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
192
38.5
1.5
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT9N50
65
0.5
AOTF9N50
65
--
Maximum Junction-to-Case
R_θJC
0.65
3.25
* Drain current limited by maximum junction temperature.
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev3: July 2010
www.aosmd.com
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