AOT9N40 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 400V,8A N-Channel MOSFET

AOT9N40
400V,8A N-Channel MOSFET
General Description
Product Summary
The AOT9N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low R_DS(on), C_iss and C_rss along
with guaranteed avalanche capability this parts can be
adopted quickly into new and existing offline power supply
designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
For Halogen Free add "L" suffix to part number:
AOT9N40L
Top View
TO-220
500V@150℃
8A
< 0.8Ω
D
DS
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
Peak diode recovery dv/dt
dv/dt
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Maximum Junction-to-Case
Symbol
R_θJA
R_θCS
R_θJC
G
AOT9N40
400
±30
8
5
22
3.2
150
300
5
132
1
-55 to 150
300
AOT9N40
65
0.5
0.95
Rev 0: Dec 2010
www.aosmd.com
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 5